New Energy Drives Growth, Global/China Ten-year CAGR Reaches 13%/15%

Power semiconductors are the core of power conversion and circuit control in electronic devices. They are semiconductors that can support high voltage and high current. They are mainly used to change voltage, frequency, and power conversion (convert direct current (DC) to alternating current (AC), convert alternating current (AC) to direct current (DC)).

IGBT (Insulated Gate Bipolar Transistor): It is a composite fully controlled power semiconductor composed of MOS and BJT. It has the two advantages of high MOS input resistance and low BJT turn-on voltage, low driving power, and low saturation voltage. It is suitable for high-voltage and high-current fields, and is the CPU of power electronic equipment.
 

In terms of voltage level, low-voltage IGBTs below 600V are mainly used in the field of consumer electronics, medium-voltage IGBTs of 600V~1200V are mainly used in new energy vehicles, photovoltaics, home appliances, industrial (welding machines, UPS) fields, ultra-high voltage above 1700V IGBTs are mainly used in rail transit, wind power, and smart grid fields.

Divided from downstream applications, according to Yole data, the market size of industrial, household, electric vehicles, rail transit, photovoltaics, and other industries in 2020 will account for 31%, 24%, 9%, 6%, and 4%.

According to our estimates, we estimate that the global IGBT market will reach 95.4 billion yuan in 2025, with a CAGR of 16% from 2020 to 2025, and the Chinese IGBT market will reach 45.8 billion yuan and a CAGR of 21% from 2020 to 2025. In 2030, the global IGBT market will reach 160.9 billion yuan, and the CAGR will reach 13% in 2020 to 2030. The Chinese IGBT market will reach 73.2 billion yuan, and the CAGR will reach 15% in 2020 to 2030. Among them, new energy vehicles, photovoltaic & energy storage contributed the largest increment.

With the rapid expansion of the global IGBT market, the requirements for power module integration, current carrying capacity, and thermal management are becoming increasingly stringent. In high-power electronic systems such as new energy vehicles, photovoltaic inverters, energy storage systems, and industrial drives, the internal electrical connection technology plays a critical role in ensuring system stability and efficiency.

IGBT laminated busbars have therefore become an essential component in modern power electronic architectures. By using multilayer laminated structures with optimized insulation materials, laminated busbars can significantly reduce stray inductance, improve current distribution, and enhance electromagnetic compatibility (EMC) performance, which are crucial for high-frequency switching applications of IGBT modules.

As a professional manufacturer of precision metal components for power electronics, our company provides customized IGBT laminated busbar solutions designed for high-power applications. With advanced stamping, welding, and insulation lamination processes, our busbars offer excellent electrical conductivity, compact structure, and reliable performance in demanding environments such as EV power systems, photovoltaic inverters, and energy storage equipment.

If you are looking for high-reliability laminated busbars for IGBT modules, our engineering team can support customized design and manufacturing according to your system requirements.